Inverted p-down Design for High-Speed Photodetectors

High-Power High-Speed Photodetectors—Design, Analysis, and Experimental Demonstration

A novel velocity-matched distributed photodetector (VMDP) is proposed to simultaneously achieve high saturation photocurrent and broad bandwidth. Theoretical analysis on the tradeoff between saturation power and bandwidth shows that the VMDP offers fundamental advantages over conventional photodetectors. A comprehensive theoretical model has been developed for the design and simulation of the V...

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach ...

High Speed Velocity-Matched Distributed Photodetectors

In the last few years, remarkable progress has been made in ultrafast, and high-speed, high power photodetectors, as reviewed in [ 1,2]. In terms of applications, the high-speed photodetectors can be divided into four general different categories: (1) high-speed digital communication systems, (2) RF photonic systems, (3) ultrafast optoelectronic sampling, and (4) optoelectronic generation of mi...

High-Power, High-Speed Velocity-Matched Distributed Photodetectors

The velocity-matched distributed photodetectors (VMDP) with high saturation power and large bandwidth have been proposed and demonstrated. The theoretical analysis on the trade-off between saturation power and bandwidth shows that VMDP provides fundamental advantages over conventional photodetectors. The theory for designing and simulating the performance of the VMDP is developed comprehensivel...

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors